Product details

Hall effect, n-Ge, carrier board

Hall effect, n-Ge, carrier board

Item no.: 11802-01

print
  • Description
  • Related Experiments
  • Downloads and Documents

Function and Applications

In connection with Halleffect-module for determination of temperature dependent Hall voltage and conductivity of nondoped semiconductors.

Equipment and technical data

  • Heatable carrier board with n-Ge-crystal, Pt100-Thermocouple, integrated heating and 4-mm-connection plugs.
  • Dimensions of crystal (mm): 20 x 10 x 1.
  • Spec. resistance: approx. 2.0-2.5 Ohm cm-
  • Max. crystal temperature: 170 °C.
  • Max. probe current: +/- 60 mA.
  • Dimensions of circuit board (mm): 73 x 70 x 3.
  • Weight: 0.03 kg
Document     Filesize
1180100e.pdf Operating instructions, English 937.49 KB

Follow us on
Facebook YouTube
PHYWE - excellence in science
  • 0
  •