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Intrinsic conductivity Ge, carrier board

Intrinsic conductivity Ge, carrier board

Item no.: 11807-01

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Function and Applications

In connection with Hall effect module for determination of temperature dependent conductivity of undoped semiconductors.

Equipment and technical data

  • Heatable carrier board with undoped Ge crystal and Pt100-Thermocouple
  • Dimensions of crystal (mm): 20 x 10 x 1
  • Specific resistance: approx. 50 Ohm cm
  • Max. crystal temperature: 170 °C
  • Max. probe current: +/- 10 mA
  • Dimensions of circuit board (mm): 73 x 70 x 39
  • Weight: 0,03 kg
Experiment Item no.
Band gap of germanium P2530402
Document     Filesize
1180100e.pdf Operating instructions, English 937.49 KB

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