Intrinsic conductivity Ge, carrier board

Function and Applications

In connection with Hall effect module for determination of temperature dependent conductivity of undoped semiconductors.

Equipment and technical data

• Heatable carrier board with undoped Ge crystal and Pt100-Thermocouple
• Dimensions of crystal (mm): 20 x 10 x 1
• Specific resistance: approx. 50 Ohm cm
• Max. crystal temperature: 170 °C
• Max. probe current: +/- 10 mA
• Dimensions of circuit board (mm): 73 x 70 x 39
• Weight: 0,03 kg