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Technical data

Hall effect, n-Ge, carrier board

Article no: 11802-01
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Function and Applications

In connection with Halleffect-module for determination of temperature dependent Hall voltage and conductivity of nondoped semiconductors.

Equipment and technical data

  • Heatable carrier board with n-Ge-crystal, Pt100-Thermocouple, integrated heating and 4-mm-connection plugs.
  • Dimensions of crystal (mm): 20 x 10 x 1.
  • Spec. resistance: approx. 2.0-2.5 Ohm cm-
  • Max. crystal temperature: 170 °C.
  • Max. probe current: +/- 60 mA.
  • Dimensions of circuit board (mm): 73 x 70 x 3.
  • Weight: 0.03 kg
 
PHYWE Systeme GmbH & Co. KG
Robert-Bosch-Breite 10 – 37079 Göttingen – Germany
www.phywe.com
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