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Function and Application
In connection with Halleffect-module for determination of temperature dependent Hall voltage and conductivity of doped semiconductors.
Equipment and technical data
- Heatable carrier board with p-Ge-crystal, Pt100-Thermocouple, integrated heating and 4-mm-connection plugs.
- Dimensions of crystal (mm): 20 x 10 x 1.
- Spec. resistance: approx. 2.0 - 2.5 Ohm cm.
- Max. crystal temperature: 170 °C.
- Max. probe current: +/- 60 mA.
- Dimensions of circuit board (mm): 73 x 70 x 3.
- Weight: 0.03 kg
Device name
Article no.
Digitale Lerninhalte
Article no. P2530116
Name
File name
File size
File type
(de) Bedienungsanleitung
1180100d .pdf
File size 0.69 Mb
pdf
(en) Operating instructions
1180100e .pdf
File size 1.28 Mb
pdf
(de) FAQ
faq_11805-01 .pdf
File size 0.21 Mb
pdf
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